5th International Conference on Applied Sciences, ICAS 2023, Baghdad, Irak, 26 - 27 Ağustos 2023, cilt.3097
This paper presents a photovoltaic device model of perovskite materials with (p-i-n) configuration for numerical simulation using the Solar Cell Capacitance Simulator (SCAPS) package software. The PV research community can use SCAPS, a thin film solar cell numerical device simulator, free of cost. This study illustrates the ideal behaviour of different thicknesses of polycrystalline thin film perovskite solar cells. To fabricate perovskite solar cells with high efficiency and reasonable material parameter selection, this simulation study will be helpful. The P-type layer is made of hole transport materials, HTM, as a Poly(3-hexylthiophene-2,5-diyl) polymer, P3HT, and the intrinsic layer is CH3NH3PbI3 perovskite and the n-type layer is composed of two layers of ZnO1.5-x /PCBMx, Zink oxide(ZnO), and [6,6]-Phenyl-C61 butyric acid methyl ester (PCBM), respectively, where x is the thickness of the PCBM. The performance parameters of solar cells, capacitance, conductance and impedance were studied under variable thickness (x=0, 0.3, 0.6, 0.9, 1.2, 1.5) μm with fixation of the parameters and other conditions in the simulation calculation process. The best performance of the solar cell in the simulation models was obtained when the electron transport materials, ETM, layer was composed of ZnO only, x=0 μm, under solar radiation intensity of 1000 W/m2.