Enhancement of the sensitivity of an ionization type semiconductor photographic system

Salamov B., Colakoglu K., Altindal Ş. , Ozer M.

JOURNAL OF PHOTOGRAPHIC SCIENCE, vol.44, no.4, pp.110-115, 1996 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 4
  • Publication Date: 1996
  • Doi Number: 10.1080/00223638.1996.11737648
  • Page Numbers: pp.110-115


The investigation of the sensitivity of a ionization-type semiconductor photographic system with high-resistivity cathode of large diameter (40-60 mm) is described. A photosensitive GaAs cathode with a resistivity of 10(6) Omega cm, has been studied. With a gas discharge gap formed by a dielectric separator with the thickness ranging from 40 to 60 mu m, a discharge has been formed in air at pressures from 20-760 Torr. The cathode was irradiated on the back with light in a particular wavelength range that mns used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. A local change of the resistance inhomogeneity is determined by a local change of discharge radiation intensity. The assessment of the resistance distribution is then based on analysis of the discharge radiation, visualized by a photograph taken through the SnO2 film. Means of increasing the sensitivity and improving the working characteristics are proposed.