In this study, two In2O3 thin films were prepared at 50W and 100W target power by using RF magnetron sputtering technique. The structural, morphological and optical properties of the produced thin films were investigated. The In2O3 gas sensors were produced by completing the fabrications of In2O3 thin films. The gas sensors were tested with changing butane gas concentration, application voltage and sensor operating temperature. When the test results were examined, it was seen that both of the produced sensors were found to be suitable for using with different sensor operating temperatures and gas concentrations.