In the present study, ZnxSn1-xS (x = 0, 0.25, 0.5, 0.75 and 1) thin film samples were deposited by ultrasonic spray pyrolysis technique on glass substrates at 350 degrees C to investigate the effect of variation of Zn concentration (x) on the structural, morphological, optical and electrical properties of ZnxSn1-xS thin films. The films were deposited by varying Zn content in the starting solution. The films deposited were found to be amorphous having root mean square (RMS) roughness ranged from 18.2 to 93.5 nm. The optical characterization by UV-Vis spectroscopy showed that the transmittance and reflectance of all samples are lower than 12.2 % and 10 % respectively. The optical band gap was estimated from the reflectance and transmittance spectra are about 3.86 eV. The carrier mobility is ranged from 113 to 2600 cm(2)/v.s.