Rich topological nodal line bulk states together with drum-head-like surface states in NaAlGe with anti-PbFCl type structure

Wang X., Ding G., Cheng Z., Sürücü G., Wang X., Yang T.

JOURNAL OF ADVANCED RESEARCH, cilt.23, ss.95-100, 2020 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.jare.2020.01.017
  • Dergi Adı: JOURNAL OF ADVANCED RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
  • Sayfa Sayıları: ss.95-100
  • Anahtar Kelimeler: Surface states, Anti-PbFCl type, Electronic structures, First-principles, TNL states, GENERALIZED GRADIENT APPROXIMATION, DIRAC SEMIMETAL
  • Gazi Üniversitesi Adresli: Hayır

Özet

The band topology in condensed matter has attracted widespread attention in recent years. Due to the band inversion, topological nodal line semimetals (TNLSs) have band crossing points (BCPs) around the Fermi level, forming a nodal line. In this work, by means of first-principles, we observe that the synthesized NaAlGe intermetallic compound with anti-PbFCI type structure is a TNLS with four NLs in the k(z) = 0 and k(z) = pi planes. All these NLs in NaAlGe exist around the Fermi level, and what is more, these NLs do not overlap with other bands. The exotic drum-head-like surface states can be clearly observed, and therefore, the surface characteristics of NaAlGe may more easily be detected by experiments. Biaxial strain has been explored for this system, and our results show that rich TNL states can be induced. Furthermore, the spin-orbit coupling effect has little effect on the band structure of NaAlGe. It is hoped that this unique band structure can soon be examined by experimental work and that its novel topological elements can be fully explored for electronic devices. (C) 2020 The Authors. Published by Elsevier BV on behalf of Cairo University.