Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature

Tanrikulu E. , Demirezen S., Altindal A., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.28, no.12, pp.8844-8856, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 28 Issue: 12
  • Publication Date: 2017
  • Doi Number: 10.1007/s10854-017-6613-3
  • Page Numbers: pp.8844-8856


The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature. The energy dependent profile of surface states (N-ss) was obtained by taking into account voltage dependent effective barrier height (phi(e)), ideality factor (n) and series resistance (R-s) of the structure. Voltage dependent profile of resistivity (R-i) and some main electrical parameters such as reverse saturation current (I-o), ideality factor (n) and zero-bias barrier height (phi(Bo)) were also evaluated from the forward bias I-V data. Experimental results reveal that the fabricated MPS structure has a higher rectification ratio with low reverse leakage current. The double logarithmic I-V plot was drawn and it shows a power-law behavior of the current (I alpha V-m). The forward and reverse bias C-V and G/omega-V measurements were carried out at enough high frequency (1 MHz) and then to eliminate of the R-s the measured C-V and G/omega-V plots were corrected. The C-V and G/omega-V plots exhibit inductive behavior at accumulation region due to the effect of N-ss and R-s. The other some electrical parameters such as concentration of acceptor atoms (N-A) and barrier height (phi(B)) were also obtained from the slope and intercept of reverse bias C- 2 vs V plot. Further, both the forward and reverse bias conduction mechanisms of the MPS structure are also discussed compare with the literature.