Akademik Veri Yönetim Sistemi
JOURNAL OF ELECTRONIC MATERIALS, cilt.45, sa.8, ss.3872-3881, 2016 (SCI-Expanded)
We present gas discharge phenomena in argon and air media using a gallium phosphide (GaP) semiconductor and metal electrodes. The system has a large-diameter (D) semiconductor and a microscaled adjustable interelectrode gap (d). Both theoretical and experimental findings are discussed for a direct-current (dc) electric field (E) applied to this structure with parallel-plate geometry. As one of the main parameters, the pressure p takes an adjustable value from 0.26 kPa to 101 kPa. After collection of experimental data, a new theoretical formula is developed to estimate the minimal breakdown point of the system as a function of p and d. It is proven that the minimal breakdown point in the semiconductor and metal electrode system differs dramatically from that in metal and metal electrode systems. In addition, the surface charge density sigma and spatial electron distribution n(e) are calculated theoretically. Current-voltage characteristics (CVCs) demonstrate that there exist certain negative differential resistance (NDR) regions for small interelectrode separations (i.e., d = 50 mu m) and low and moderate pressures between 3.7 kPa and 13 kPa in Ar medium. From the difference of currents in CVCs, the bifurcation of the discharge current is clarified for an applied voltage U. Since the current differences in NDRs have various values from 1 mu A to 7.24 mu A for different pressures, the GaP semiconductor plasma structure can be used in microwave diode systems due to its clear NDR region.