New method and treatment technique applied to interband transition in GaAs1-xPx ternary alloys

Baleanu C., Nigmatullin R. R., Cetin S. Ş., BALEANU D., ÖZÇELİK S.

CENTRAL EUROPEAN JOURNAL OF PHYSICS, cilt.9, sa.3, ss.729-739, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9 Sayı: 3
  • Basım Tarihi: 2011
  • Doi Numarası: 10.2478/s11534-010-0068-y
  • Dergi Adı: CENTRAL EUROPEAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.729-739
  • Anahtar Kelimeler: Eigen-coordinates method, critical points energy, spectroscopic ellipsometry, MBE, GaAsP, EIGEN-COORDINATES METHOD, EXPERIMENTAL CONFIRMATION, DIELECTRIC-RELAXATION, FRACTIONAL KINETICS, OPTICAL-CONSTANTS, MESOSCALE REGION, RECOGNITION, SEMICONDUCTORS, IDENTIFICATION, EQUATIONS
  • Gazi Üniversitesi Adresli: Evet

Özet

In this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in comparison with conventional ones and has a wide range of application for the calculation of the fitting parameters related to nontrivial functions that initially have nonlinear fitting parameters that are difficult to evaluate. The new method was applied to determine the CPs energies from the dielectric functions of the MBE grown GaAs1-xP (x) ternary alloys obtained using spectroscopic ellipsometry (SE) measurements at room temperature in the 0.5-5 eV photon energy region. The obtained results are in good agreement with the results of the other methods.