Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

PAKMA O., ÇAVDAR Ş., KORALAY H., TUĞLUOĞLU N., YÜKSEL Ö. F.

PHYSICA B-CONDENSED MATTER, cilt.527, ss.1-6, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 527
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.physb.2017.09.101
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1-6
  • Anahtar Kelimeler: Organic semiconductor, Coronene, Schottky diode, Illumination intensity, Ideality factor, Barrier height, CURRENT-VOLTAGE CHARACTERISTICS, INTERFACE-STATE DENSITY, ELECTRICAL CHARACTERIZATION, BARRIER DIODES, PHOTOVOLTAIC PROPERTIES, INHOMOGENEOUS BARRIER, ORGANIC INTERLAYER, SERIES RESISTANCE, TEMPERATURE, HETEROJUNCTION
  • Gazi Üniversitesi Adresli: Evet

Özet

In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current-voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (FB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The FB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm(2), respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm(2), respectively. Additionally, the series resistance (R-s) values from modified Norde method and interface state density (N-ss) values using current-voltage measurements have been determined. The values of R-s have been found to be 1924 and 5094 Omega at dark and 100 mW/cm(2), respectively. The values of N-ss have been found to be 4.76 x 10(12) and 3.15 x 10(12) eV(-1) cm(-2) at dark and 100 mW/cm(2), respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.