Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs)


Tascioglu I., AYDEMİR U., Altindal Ş. , Tunc T.

1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Turkey, 12 - 15 May 2011, vol.1400, pp.307-311 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1400
  • Doi Number: 10.1063/1.3663133
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.307-311

Abstract

This study presents the effect of illumination on main electrical parameters of Schottky barrier diode (SBD). The admittance (capacitance-voltage (C-V) and conductance-voltage (G/omega-V)) characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si SBD were investigated in dark and under various illumination intensities. Experimental results demonstrate that the C-V plots give a peak due to the illumination induced interface states or electron-hole pairs at metal/semiconductor (M/S) interface. The C-2-V plots were also drawn to determine main electrical parameters such as doping concentration (N-D), depletion layer width (W-D) and barrier height (Phi(B)(C-V)) of device. In addition, the voltage dependence R-s values were obtained from C-V and G/omega-V data by using Nicollian and Brews method. In order to obtain the real diode capacitance and conductance, the high frequency (1 MHz) C-m and G(m)/w values were corrected for the effect of series resistance. All these observations confirm that both C-V and G/w-V characteristics were strongly affected by illumination.