Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

LİŞESİVDİN S. B. , Khan N. A. , Mazzucato S., Balkan N., Adams M. J. , Korpijarvi V., ...Daha Fazla

NANOSCALE RESEARCH LETTERS, cilt.9, 2014 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Cilt numarası: 9
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1186/1556-276x-9-22


We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.