Akademik Veri Yönetim Sistemi
Materials Science in Semiconductor Processing, cilt.209, 2026 (SCI-Expanded, Scopus)
To passivate interface states and enhance photocapacitive sensitivity, high-quality Poly(2-ethylhexyl acrylate) (PEHA) films were coated as an interlayer on n-Si via initiated Chemical Vapor Deposition (iCVD). Further, the iCVD technique provides a distinct advantage over conventional solution-based methods by enabling completely solvent-free and conformal film growth that preserves monomer functionality. In this study, the photodiode, photocapacitance and photoconductance characteristics of fabricated Au/PEHA/n-Si (MPS) and reference Au/n-Si (MS) diodes onto the same n-Si wafer and in the same conditions were comparatively investigated in the dark and under various illumination intensities (40–200 mW/cm2) to determine the illumination and PEHA interlayer effects on key electrical parameters and conduction mechanisms. I-V analyses performed in the dark and under illumination demonstrated that the MPS structure with PEHA interlayer increased the barrier height and prevented interface recombination, resulting in a stable Voc response in the device. To achieve sufficient accuracy and reliable results, impedance measurements were performed over a wide range of voltages and illuminations at 500 kHz. Experimental findings demonstrate that the PEHA interlayer effectively passivates the interface state density. Mott-Schottky analysis revealed that while the reference structure exhibited anomalies under illumination, the MPS structure showed stable barrier modulation consistent with the photovoltaic effect. Notably, the presence of the PEHA interlayer increased the photocapacitive sensitivity (Spc) by ∼ 93% compared to the reference structure.