TEMPERATURE DEPENDENCED CONDUCTIVITY OF PtSi/n-Si SCHOTTKY DIODES WITH SELF-ASSEMBLED PATCHES

Afandiyeva I. M., Altindal Ş.

International Conference on Modern Trends in Physics, Baku, Azerbaycan, 1 - 03 Mayıs 2019, ss.80-83 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Basıldığı Şehir: Baku
  • Basıldığı Ülke: Azerbaycan
  • Sayfa Sayıları: ss.80-83
  • Gazi Üniversitesi Adresli: Evet

Özet

Electrical conductivity of PtSi/n-Si Scottky diodes with the contact area of 8x10(-6) cm(2) have been investigated by using impedance spectroscopy method (ISM) in the wide temperature range of 79-360 K and voltage range of +/- 2V, using of a small ac signal (20 mV) at 500 kHz, respectively. The values of activation energy E-a are obtained from the slope of the ln(sigma) - q/2kTplots decreased from 0.39eV to 0.1eV with increasing of the temperature from 79 K to 360 K. This fact indicates that in this temperature range hopping conductivity with variable hopping length over localized states is observed. According to Mott equations, the length of jump (R=26,6-18,2 angstrom) over localized states and the density of localized states near the Fermi level have been calculated. Obtained result attributed to the presence of self assembled patches in PtSi/nSi diodes.