The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes


Zeyrek S., Acaroglu E., Altindal Ş. , Birdogan S., Bulbul M. M.

CURRENT APPLIED PHYSICS, vol.13, no.7, pp.1225-1230, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 7
  • Publication Date: 2013
  • Doi Number: 10.1016/j.cap.2013.03.014
  • Title of Journal : CURRENT APPLIED PHYSICS
  • Page Numbers: pp.1225-1230

Abstract

The capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/w-V-f) characteristics of Al/perylene/p-Si Schottky barrier diodes (SBDs) fabricated with spin coating system have been investigated in the frequency range of 30 kHz-2 MHz at room temperature. In order to elucidate the electrical characteristics of SBDs with perylene interface, the voltage and frequency dependent series resistance (R-S), frequency dependent density distribution profile of interface state (N-SS) were obtained. The measurements of C and G/w were found to be strongly dependent on bias voltage and frequency for Al/perylene/p-Si SBDs. For each frequency, the R-S-V plot gives a peak, decreasing with increasing frequencies. Also, it has been shown that the interface states density exponentially decreases with increasing frequency. The C-V-f and G/w-V-f characteristics confirm that the N-SS and R-S of the diode are important parameters that strongly influence the electric parameters in metal/polymer/semiconductor (MPS) structure. (C) 2013 Elsevier B.V. All rights reserved.