Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures


Akbas A. M. , ÇİÇEK O., ALTINDAL Ş., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, vol.32, no.1, pp.993-1006, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 32 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.1007/s10854-020-04875-6
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.993-1006
  • Gazi University Affiliated: Yes

Abstract

© 2020, Springer Science+Business Media, LLC, part of Springer Nature.This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential (VD), doping donor density (ND), Fermi energy level (EF), maximum electric field (Em), depletion layer thickness (Wd), and barrier height (ΦB) are derived by using the intercept and slope of C−2–V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states (Nss) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 × 1012 eV−1 cm−2 and 2.92 µs at 0.452 eV, and 3.857 × 1012 eV−1 cm−2 and 164 µs at 0.625 eV, respectively. The lower Nss values are the consequence of passivation effect of the used nanographite (NG)-PVP polymer interlayer. As a result, the polymer interlayer based nanographite (NG)-PVP is candidate instead of the widely used oxide/insulator layer for the purpose of decreasing the surface states or dislocations.