On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 MHz

BALCI E., Vahid A. F., Avar B., ALTINDAL Ş.

Physica B: Condensed Matter, cilt.695, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 695
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.physb.2024.416576
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Al/DLC/p-Si Schottky structures, DLC interlayer, Frequency dependent dielectric properties, Polarization processes, Surface states
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent (tanδ), ac electrical-conductivity (σac) and phase-angle (θ) were investigated in the frequency and voltage ranges of 2kHz/1 MHz and -2V/4V, respectively. The increase in ε′ and ε” values with decreasing frequency is attributed to surface-states (Nss), surface/dipole-polarizations at the diamond-like carbon (DLC)/Si interface. This behavior of ε′ and ε” is known as Maxwell-Wagner type polarization. The M''-V plot has clear peak for each frequency and its position shifts from −0.6V (at 2 kHz) to 1.65V (at 1 MHz) due to the relaxation process and Nss at low-mid frequencies. Values of ε′ and ε” changed from 16.27 to 8.12 and 456.93 to 8.73 for 3V in the range of 2 kHz and 1 MHz, respectively. Therefore, the fabricated Al/DLC/p-Si can be used as an alternative to insulators for further electronic-charging/energy-storage.