Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface

Paul N., Filimonov S., Cherepanov V., ÇAKMAK M., Voigtlaender B.

PHYSICAL REVIEW LETTERS, cilt.98, sa.16, 2007 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 98 Sayı: 16
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1103/physrevlett.98.166104
  • Dergi Adı: PHYSICAL REVIEW LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Gazi Üniversitesi Adresli: Evet

Özet

The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.