In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I?V) measurements. The I?V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (?4 V) at room temperature. To determine gamma-irradiation effects on the MPS-type SDs accurately, one SD was preferred as a sample, and its significant electrical parameters such as zero-bias barrier height (?B0), ideality factor (n), and reverse-saturation-current (I0) were calculated using the linear parts of the ln(I)?V characteristics. Besides, to observe the effects of gamma-rays on MPS-type SDs in different voltage regions, some diode parameters were obtained by different calculation methods such as Cheung and Norde functions as well as Thermionic Emission (TE) theory. The calculations showed that high doses of gamma-irradiation (>5 kGy) caused the annealing effect, which leads to an improvement in some electrical parameters of SD, especially in the high electric field region. On the other hand, the energy distribution of the surface states (Nss) was obtained by utilizing the voltage-dependent ideality factor and the effective barrier height, with and without considering the series resistance (Rs) effect. It was observed that Nss values decreased almost as exponentially from the mid-band gap of the semiconductor towards the upper edge of the valance-band. Also, the density of surface states decreased with increasing radiation doses. As a result, almost all diode parameters are affected by irradiation. However, no significant defect has been detected that would affect the stable operation of the diode. Hence, Al/ (ZnO-PVA)/p-Si type SD can be used as an MPS-type detector instead of MIS/MOS-type detectors due to some advantages of the organic/polymer interlayer such as being cheap, light per molecule, flexible and requiring low energy consumption.