Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

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Taşdemir İ. H., Vural Ö., Dökme İ.

PHILOSOPHICAL MAGAZINE, cilt.96, ss.1684-1693, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 96
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1080/14786435.2016.1178403
  • Dergi Adı: PHILOSOPHICAL MAGAZINE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1684-1693
  • Anahtar Kelimeler: p-Si/TiO2-Zr/Al structure, I-V characteristic, interface states, series resistance, C-V CHARACTERISTICS, DIELECTRIC-PROPERTIES, BARRIER HEIGHT, TEMPERATURE-DEPENDENCE, SERIES RESISTANCE, PARAMETERS, FREQUENCY, DIODES, TIO2, LAYER
  • Gazi Üniversitesi Adresli: Evet

Özet

Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO2 dispersion in H2O to construct p-Si/TiO2/Al Schottky barrier diode (D1) and the other one with TiO2 dispersion doped with zirconium to construct p-Si/TiO2-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current-voltage (I-V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (phi(B0)), series resistance (Rs) and interface state density (Nss) were calculated from I-V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO2/Al Schottky device were influenced by the zirconium dopant in TiO2.