Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

Turk C. G., TAN S. O., ALTINDAL Ş., İNEM B.

PHYSICA B-CONDENSED MATTER, cilt.582, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 582
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.physb.2019.411979
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Electrical data, Conduction mechanism, Series resistance, Surface states, AC ELECTRICAL-CONDUCTIVITY, DIELECTRIC-PROPERTIES, V CHARACTERISTICS, IDEALITY FACTOR, C-V, TEMPERATURE, DIODES, CAPACITANCE, RELAXATION, PROFILES
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/ conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (+/- 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/omega values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C-2-V plot, the doping acceptor atoms (N-A), BH and depletion layer width (W-D) were obtained for each frequency, respectively. Both BH and W-D values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of R-s and frequency from C and G data.