Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure


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LİŞESİVDİN S. B. , Atmaca G., Arslan E., Cakmakyapan S., Kazar O., Butun S., ...More

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol.63, pp.87-92, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 63
  • Publication Date: 2014
  • Doi Number: 10.1016/j.physe.2014.05.016
  • Journal Name: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.87-92
  • Keywords: Graphene, 2-dimensional, SIC, Hall effect, Scattering mechanism, MOBILITY SPECTRUM ANALYSIS, ALGAN/GAN HETEROSTRUCTURES, ELECTRICAL-PROPERTIES, PARALLEL CONDUCTION, SILICON-CARBIDE, GAN, ELECTRONS, HETEROJUNCTIONS, TRANSPORT, VAPOR
  • Gazi University Affiliated: Yes

Abstract

Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SIC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SIC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data. (c) 2014 Elsevier B.V. All rights reserved.