A numerical study on subband structure of InxAl1-xN/GaN-based HEMT structures with low-indium (x < 0.10) barrier layer

Elibol K., Atmaca G., Tasli P., LİŞESİVDİN S. B.

SOLID STATE COMMUNICATIONS, cilt.162, ss.8-12, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 162
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.ssc.2013.03.005
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.8-12
  • Anahtar Kelimeler: InAlN/AlN/GaN, HEMT, Subband, 2DEG, 2-DIMENSIONAL ELECTRON-GAS, MOBILITY TRANSISTORS, ALGAN/GAN, HETEROSTRUCTURES, CHARGE, SIMULATION, TRANSPORT
  • Gazi Üniversitesi Adresli: Evet

Özet

The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrodinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values. (C) 2013 Elsevier Ltd. All rights reserved.