Akademik Veri Yönetim Sistemi
Journal of Optics (India), 2026 (ESCI, Scopus)
Throughout this research, the semiconductor-insulator-semiconductor (SIS) heterojunction-based WS2/AlN/Si/Al is manufactured using RF sputtering set-up. It is made of silicon as the substrate and an AlN layer that is 10 nm thick as an insulator. Electrical characterizations consist of measuring current against voltage in dark and light conditions and capacitance versus voltage under various applied frequencies. Several parameters of the SIS heterojunction, including as the ideality factor (n), barrier height (ΦB), and series resistance (Rs), are calculated using the Cheung-Cheung and Norde approximations. The SIS diode parameters are changing with light, n from 4.26 to 6.58, I0 from 6.17 to 385 µA, ΦB from 0.70 to 0.59 eV and Rs from 613 to 50 Ω. The dielectric parameters are retrieved from the C–V and 1/C2-V, G–V characteristics under different frequencies. Photodetecting characteristics of the photodetector based on TMDCs WS2 layer are considered and gain reaches 200 and 123 × 103 respectively under solar simulator and filter. Besides, diode resistance, dielectric properties, impedance spectroscopy and Nyquist diagram of such SIS device are investigated showing a frequency dependence. SCAPS-1D is used to simulate the photodetector, as it shares the same fundamental processes of photogeneration, carrier transport, and recombination with solar cells.