The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation


Ardali S., Atmaca G., LİŞESİVDİN S. B. , Malin T., Mansurov V., Zhuravlev K., ...Daha Fazla

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.252, sa.9, ss.1960-1965, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 252 Konu: 9
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1002/pssb.201552135
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
  • Sayfa Sayıları: ss.1960-1965

Özet

The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. Al0.3Ga0.7N/AlN/GaN heterostructures with different doping and layer structures were grown by molecular beam epitaxy with or without growing an in situ SiN passivation layer. The classical Hall effect measurements were carried out as a function of temperature in the range between T=1.82K and 270K at a fixed magnetic field in dark conditions. The effect of doping of the barrier layer and replacing an AlN inter-layer between the AlGaN barrier and the GaN layer, where the two-dimensional electron gas is populated, on mobility and sheet carrier concentration were also determined.