Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Cicek O., Tecimer H. U., Tan S. O., Tecimer H., Altindal Ş., Uslu I.

COMPOSITES PART B-ENGINEERING, cilt.98, ss.260-268, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 98
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.compositesb.2016.05.042
  • Dergi Adı: COMPOSITES PART B-ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.260-268
  • Anahtar Kelimeler: Nano-structures, Polymer (textile) fibre, Electrical properties, SCHOTTKY-BARRIER DIODES, APPLIED BIAS VOLTAGE, DIELECTRIC-PROPERTIES, SOLAR-CELLS, TEMPERATURE, INTENSITY, PLOT, NANOCOMPOSITES, NANOFIBERS, FREQUENCY
  • Gazi Üniversitesi Adresli: Evet

Özet

Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (I-o), ideality factor (n), barrier height (Phi(Bo)), series (R-s) and shunt resistances (R-sh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current -voltage (I -V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in R-s value and an increase in R-sh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = I-F/I-R), is the proof of the quality for diodes, significantly improved. Also, the Phi(Bo) values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions. (C) 2016 Elsevier Ltd. All rights reserved.