Akademik Veri Yönetim Sistemi
Journal of Materials Science: Materials in Electronics, cilt.36, sa.30, 2025 (SCI-Expanded, Scopus)
In this study, several important fundamental physical parameters of the developed Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky diodes were procured from the impedance–voltage (Z–V) measurements undertaken across the broad frequency spectrum of 2–1000 kHz and with voltages ranging from ± 4.5 V. While the doping donor atoms (Nd) and series resistance (Rs) values exhibit an almost exponential decrease with increasing frequency, barrier height (ΦB) and depletion layer width (Wd) demonstrate a nearly linear increase. The energy-dependent profile of surface states (Nss) and associated lifetimes (τ) were identified through the parallel-conductance method pioneered by Nicollian and Goetzberger, which is the most reliable and accurate method compared to others. Furthermore, these parameters were attained and contrasted using the Card–Rhoderick method on the forward-bias current–voltage (I–V) measurements. The results obtained from two different methods agree and exhibit a high degree of correlation. The measured high-frequency capacitance/conductance–voltage (C/G–V) plots were also corrected by considering the Rs effect, which demonstrated that the effect of Rs is more pronounced in the strong accumulation zone. The experimental results indicated that all basic electrical parameters exhibit a pronounced dependence on frequency and voltage. Furthermore, the (ZnO:CeO2:PVP) organic interlayer showed the potential to effectively substitute for conventional insulator layers produced through conventional methods.