© 2022 IOP Publishing Ltd.Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements in the dark and under 200 mW cm−2 illuminance. To designate the voltage or calculation method effects on the ideality factor (n), barrier height (BH-ΦB ), and series resistance (R s ), these parameters were extracted from different methods. These parameters extracted through the Thermionic-emission (TE) theory, Ohm’s law, Norde and Cheung functions were compared with each other. The reverse bias ln(I R )−V R 0.5 plots were also drawn to designate the validity of Poole-Frenkel and Schottky emissions. In Z-V measurements, NC and related IB phenomena were observed at 500 kHz-fixed frequency in the dark and under illuminance. The interface states (D it ) variation depending on energy and voltage was obtained using I-V and C/G-V measurements and related equations. The calculations of the diffusion-potential (V D ), acceptor-atoms (N A ), Fermi-energy (E F ), and ΦB (C-V) values were performed by fitting the observed linear in the reverse bias C −2 -V plot. A detailed analysis of NC was performed via the drawn C/(G/ω)-I plots for positive voltages. All experimental results show that the used calculation method, illumination, and voltage are highly effective on the electrical parameters.