Akademik Veri Yönetim Sistemi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.200, 2025 (SCI-Expanded)
It is vital to discover performances of nanomaterials especially semiconductor nanowires since they display novel electrical, optical and mechanical properties owing to their decreased dimensionally and nanoscale size that make them suitable for a wide range of applications in various fields. Therefore, here we report a new structure which enable us to measure optical parameters of ZnO and ZnS nanowires through simulation techniques such as finite element modeling (FEM) software package ABAQUS and Ansys Lumerical finite-difference time-domain (FDTD) so that the samples were modeled with different types of materials and cross-sections to provide a complete understanding of bending strain effects on the optical characterization including electric field intensity, magnetic field intensity, Poynting vector, power absorption and absorption. Herein, ZnO nanowires were grown on Si substrate via chemical vapor deposition (CVD) method to estimate the dimensions such as length and diameter as described in detail in the experimental section. Hence, field emission scanning electron microscopy (FESEM, HITACHI SU-8010) and scanning electron microscope (SEM) were employed to extract morphology, size distribution and images of ZnO products, having perfect hexagonal structure. In the proposed procedure, the measurement studies indicated that different strains, resulting in different optical responses, which means that refractive indexes were first affected by the mechanical strains and subsequently leading to changes in optical performances.