Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes


TATAROĞLU A. , Altindal Ş. , Bulbul M. M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.568, no.2, pp.863-868, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 568 Issue: 2
  • Publication Date: 2006
  • Doi Number: 10.1016/j.nima.2006.08.047
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Page Numbers: pp.863-868

Abstract

It is well known that the exposure of any semiconductor surfaces to the Co-60 gamma-ray irradiation causes electrically active defects. To investigate the effect of gamma-ray irradiation dose on the electrical characteristics of metal-insulator-semiconductor (MIS) Schottky diodes, the fabricated devices were exposed to 7 radiation at a dose of 2.12kGy/h. The total dose range was from 0 to 450kGy at room temperature. The density of interface states N-ss as a function of E-ss-E-v, the values of series. resistance R, and the bias dependence of the effective barrier height 0, for each dose were obtained from the forward bias I-V characteristics. Experimental results show that the gamma-irradiation gives rise to an increase in the zero bias barrier height Phi(BO), as the ideality factor n, R-s and N-ss decreases with increasing radiation dose. (c) 2006 Elsevier B.V. All rights reserved.