Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes

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Atıf İçin Kopyala

TATAROĞLU A., Altindal Ş., Bulbul M. M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.568, sa.2, ss.863-868, 2006 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 568 Sayı: 2
• Basım Tarihi: 2006
• Doi Numarası: 10.1016/j.nima.2006.08.047
• Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.863-868
• Anahtar Kelimeler: gamma-ray effects, MIS schottky diodes, I-V characteristics, interface states, series resistance, INTERFACE STATES, ELECTRICAL CHARACTERISTICS, SURFACE-STATES, MOS CAPACITORS, RADIATION, DEPENDENCE, TRANSPORT, GENERATION, PARAMETERS, MECHANISM
• Gazi Üniversitesi Adresli: Evet

Özet

It is well known that the exposure of any semiconductor surfaces to the Co-60 gamma-ray irradiation causes electrically active defects. To investigate the effect of gamma-ray irradiation dose on the electrical characteristics of metal-insulator-semiconductor (MIS) Schottky diodes, the fabricated devices were exposed to 7 radiation at a dose of 2.12kGy/h. The total dose range was from 0 to 450kGy at room temperature. The density of interface states N-ss as a function of E-ss-E-v, the values of series. resistance R, and the bias dependence of the effective barrier height 0, for each dose were obtained from the forward bias I-V characteristics. Experimental results show that the gamma-irradiation gives rise to an increase in the zero bias barrier height Phi(BO), as the ideality factor n, R-s and N-ss decreases with increasing radiation dose. (c) 2006 Elsevier B.V. All rights reserved.