Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.766-769, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 2 Sayı: 12
  • Basım Tarihi: 2008
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.766-769
  • Anahtar Kelimeler: Sn/p-InP SBDs, Barrier inhomogeneity, Gaussian distribution, Temperature dependence, CURRENT-VOLTAGE, ELECTRON-TRANSPORT, HEIGHT, INHOMOGENEITIES, CONTACTS, GAAS
  • Gazi Üniversitesi Adresli: Evet

Özet

The observed non-ideal of Sn/p-InP Schottky barrier diode (SBD) parameters such as the zero-bias barrier height Phi(Bo)(I-V. and ideality factor n were obtained from the forward bias current-voltage (I-V) characteristics in the temperature range of 80-400 K. By using the thermionic emission (TE) mechanism, the Phi(Bo)(I-V) and n were found strongly temperature dependent and while the Phi(Bo)(I-V) increases, the n decreases with increasing temperature. Also, especially at low temperatures the conventional Richardson plot is clearly non-linear. Such behavior of Phi(Bo)(I-V) and n is attributed to SB inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at metal/semiconductor interface. Therefore, (Phi) over bar (Bo) and effective Richardson constant A* are found as 1.151 eV and 56.954 A/ cm(2)K(2), respectively, from a modified In(I-o/T-2)-q(2) sigma(2)(o)/2(kT)(2) vs q/kT plot and this value of the A* (56.954 A/cm(2)K(2)) is very close to the theoretical value of 60 A/cm(2)K(2) for p-InP.