Prebreakdown current behaviour in the ionization cell with a semiconductor cathode


Salamov B., Kasap M. , Lebedeva N.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.33, no.17, pp.2192-2195, 2000 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 17
  • Publication Date: 2000
  • Doi Number: 10.1088/0022-3727/33/17/315
  • Title of Journal : JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Page Numbers: pp.2192-2195

Abstract

The prebreakdown spatial current stabilization df the Townsend discharge in an ionization cell with a high-resistivity semiconductor plate, a gap thickness of 20 mu m and gas pressures of 200 and 10(-3) Ton is studied. It has been found, for the first time, that the substitution of one of the metallic electrodes in an ionization cell by a semiconductor electrode leads to the occurrence of a current of 10(-6)-10(-5) A, while in the case of two metallic electrodes a current above 10(-7) A is not observed. It is shown that the generation of carriers by a gas discharge establishes a positive feedback. A qualitative discussion of this effect is given, which includes avalanche formation in a system having a high-resistivity semiconductor for the Townsend discharge region. The recording of the current-voltage characteristic between parallel-plane electrodes is realized.