Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells

Sun, Y.; Balkan, N.; Aslan, M.; LİŞESİVDİN, SEFER; Carrere, H.; Arikan, M.; Marie, X.

doi:10.1088/0953-8984/21/17/174210

Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells

Atıf İçin Kopyala

Sun Y., Balkan N., Aslan M., LİŞESİVDİN S. B., Carrere H., Arikan M. C., ...Daha Fazla

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.21, sa.17, 2009 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 21 Sayı: 17
Basım Tarihi: 2009
Doi Numarası: 10.1088/0953-8984/21/17/174210
Dergi Adı: JOURNAL OF PHYSICS-CONDENSED MATTER
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Gazi Üniversitesi Adresli: Evet

Özet

We present a comprehensive study of longitudinal transport of two-dimensional (2D) carriers in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum well structures. The Hall mobility and carrier density of electrons in the n- modulation doped quantum wells (QWs) decreases with increasing nitrogen composition. However, the mobility of the 2D holes in p-modulation doped wells is not influenced by nitrogen and it is significantly higher than that of 2D electrons in n- modulation doped material. The observed behaviour is explained in terms of increasing electron effective mass as well as enhanced N-related alloying scattering with increasing nitrogen content.