Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells

Sun Y., Balkan N., Aslan M., LİŞESİVDİN S. B. , Carrere H., Arikan M. C. , ...More

JOURNAL OF PHYSICS-CONDENSED MATTER, vol.21, no.17, 2009 (Peer-Reviewed Journal) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 21 Issue: 17
  • Publication Date: 2009
  • Doi Number: 10.1088/0953-8984/21/17/174210
  • Journal Indexes: Science Citation Index Expanded, Scopus


We present a comprehensive study of longitudinal transport of two-dimensional (2D) carriers in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum well structures. The Hall mobility and carrier density of electrons in the n- modulation doped quantum wells (QWs) decreases with increasing nitrogen composition. However, the mobility of the 2D holes in p-modulation doped wells is not influenced by nitrogen and it is significantly higher than that of 2D electrons in n- modulation doped material. The observed behaviour is explained in terms of increasing electron effective mass as well as enhanced N-related alloying scattering with increasing nitrogen content.