Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures

Karatas S., Tueruet A., Altindal Ş.

RADIATION PHYSICS AND CHEMISTRY, cilt.78, sa.2, ss.130-134, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 78 Sayı: 2
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.radphyschem.2008.09.006
  • Dergi Adı: RADIATION PHYSICS AND CHEMISTRY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.130-134
  • Anahtar Kelimeler: Co-60 gamma-rays, C-V and G/omega-V characteristics, Series resistance, Interface states density, Si, GAMMA-RAY IRRADIATION, SCHOTTKY-BARRIER DIODES, ELECTRICAL CHARACTERISTICS, INTERFACE, RADIATION, RESISTANCE, DENSITY
  • Gazi Üniversitesi Adresli: Evet

Özet

In this paper, we have investigated the effects of Co-60 gamma (gamma)-ray source on the electrical properties of Sn/p-Si metal-semiconductor (MS) structures using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements before and after irradiation at room temperature. The MS structures were investigated in the frequency range 20-700 kHz irradiation effects on the electrical properties of Sn/p-Si MS structures before irradiation, and after irradiation, these structures were exposed to Co-60 gamma-ray source irradiation with the dose rate of 2.12 kGy/h and the total dose range was 0-500 kGy at room temperature. It was found that the C-V and G/omega-V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increase in dose. On the other hand, the interface state density (N-ss) as depended on radiation dose and frequency was determined from C-V and G/omega-V measurements, and the interface states densities decreased with increase in frequency and radiation dose. (C) 2008 Elsevier Ltd. All rights reserved.