The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure

Barkhordari A., Altındal Ş., Pirgholi-Givi G., Mashayekhi H., Özçelik S., Azızıan-Kalandaragh Y.

SILICON, cilt.15, sa.2, ss.855-865, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 2
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s12633-022-02044-4
  • Dergi Adı: SILICON
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Sayfa Sayıları: ss.855-865
  • Anahtar Kelimeler: Schottky Barrier Diodes (SBDs), Polyvinylchloride (PVC) and SnS-PVC interlayer, Electrical and dielectric properties, Negative capacitance/dielectric constant, NEGATIVE CAPACITANCE, ADMITTANCE CHARACTERISTICS, IMPEDANCE PROPERTIES, VOLTAGE-DEPENDENCE, SCHOTTKY-DIODES, CONDUCTIVITY, TEMPERATURE, FREQUENCY, MECHANISM, AC
  • Gazi Üniversitesi Adresli: Evet

Özet

To determine the impact of pure and (PVC:SnS) interlayers on the electrophysical features of Schottky barrier diodes (SBDs), Au/n-Si, Au/PVC/n-Si, and Au/(PVC: SnS)/n-Si structures are created on the same n-Si wafer. The average crystalline size, surface-morphology, purity-characterization, and optical features of the prepared SnS-nanostructure are studied by different common techniques. Basic electrical-parameters of these structures are calculated from the I-V data. The energy-dependent distribution of surface-states (N-ss) and the current-conduction-mechanisms (CCMs) in these diodes were extracted. The use of PVC and SnS-doped PVC interfacial polymer layers leads to improving the performance of SBDs by increasing the n, R-s, N-ss, I-0 and an increase in R-sh, Barrier Height (BH). The dielectric-constant (epsilon')/loss (epsilon ''), and ac electrical-conductivity sigma(ac) of them are investigated in wide-range frequency (100 Hz-1 MHz) by using capacitance/conductance-frequency (C/G-f) measurements and the origin of observed negative capacitance/dielectric at low-frequencies were discussed in details.