Temperature-dependent galvanomagnetic measurements on doped InSb and InAs grown by liquid encapsulated czochralski

Kasap M., ACAR S., Ozcelik S., Karadeniz S., Tugluoglu N.

Chinese Physics Letters, vol.22, no.5, pp.1218-1221, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 5
  • Publication Date: 2005
  • Doi Number: 10.1088/0256-307x/22/5/054
  • Journal Name: Chinese Physics Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1218-1221
  • Gazi University Affiliated: Yes


Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350 K) and magnetic field (0-1.35 T). In Te-doped InSb, an impurity level with energy E1 = 3 meV and the activation energy E0 = 0.26 e V, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed. © 2005 Chinese Physical Society and IOP Publishing Ltd.