Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

Arslan, Engin; Ozturk, Mustafa; Cakmak, Huseyin; Demirel, Pakize; ÖZÇELİK, SÜLEYMAN; ÖZBAY, Ekmel

doi:10.1007/s10854-013-1427-4

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

Atıf İçin Kopyala

Arslan E., Ozturk M. K., Cakmak H., Demirel P., ÖZÇELİK S., ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.24, sa.11, ss.4471-4481, 2013 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 24 Sayı: 11
Basım Tarihi: 2013
Doi Numarası: 10.1007/s10854-013-1427-4
Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.4471-4481
Gazi Üniversitesi Adresli: Evet

Özet

The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.