Epitaxial growth and electrical characterization of germanium


Creative Commons License

Bosi M., Attolini G., Ferrari C., Frigeri C., Calicchio M., Gombia E., ...Daha Fazla

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.46, ss.813-817, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 46 Konu: 8
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1002/crat.201000618
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Sayfa Sayıları: ss.813-817

Özet

Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 degrees C and 675 degrees C, using AsH3 as n-type dopant. Ge-n/Ge-p, GaAsn/InGaPn/Ge-n/Ge-p and Ge-n/Ge-p/Ge-p structures were prepared and studied, where n and p identify the layer or substrate doping. Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim