Epitaxial growth and electrical characterization of germanium

Creative Commons License

Bosi M., Attolini G., Ferrari C., Frigeri C., Calicchio M., Gombia E., ...More

CRYSTAL RESEARCH AND TECHNOLOGY, vol.46, no.8, pp.813-817, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 46 Issue: 8
  • Publication Date: 2011
  • Doi Number: 10.1002/crat.201000618
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.813-817
  • Keywords: germanium, epitaxy, electrical characterization
  • Gazi University Affiliated: Yes


Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 degrees C and 675 degrees C, using AsH3 as n-type dopant. Ge-n/Ge-p, GaAsn/InGaPn/Ge-n/Ge-p and Ge-n/Ge-p/Ge-p structures were prepared and studied, where n and p identify the layer or substrate doping. Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim