Electrical analysis of Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study


Ocak S. , Selcuk A. B. , Aras G., ORHAN E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.38, pp.249-256, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38
  • Publication Date: 2015
  • Doi Number: 10.1016/j.mssp.2015.04.030
  • Title of Journal : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Page Numbers: pp.249-256

Abstract

Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures were fabricated. Based on the measured current voltage (C-V) and capacitance voltage curves, the electrical characteristics of these heterostructures such as ideality factor, barrier height and series resistance of each structure were analyzed and then compared with those of Al/PMMA/ZnO/p-Si. According to C-V measurement, it was found that the Al/PMMA/ZnO/p-Si structure indicates the better electronic performance rather than other structures. The obtained results represent low series resistance (19.3 Omega) after coating with polymethyl methacrylate (PMMA) over ZnO/p-Si heterojunction structure for Al/PMMA/ZnO/p-Si heterostructure. (C) 2015 Elsevier Ltd. All rights reserved.