Akademik Veri Yönetim Sistemi
ECS Journal of Solid State Science and Technology, cilt.12, sa.8, 2023 (SCI-Expanded)
Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, φB0) increases with increasing temperature. The value of Richardson constant (A∗) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34 × 10-3 A.cm-2K-2, respectively. This low A∗ value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, φBo vs n and φBo vs q/(2kT) curves were illustrated. The φ¯ B value was found as 1.19 eV from the linear φB0 vs n plot for ideal case (n = 1). The mean-value of BH ( φ¯B0) and standart deviation (σ s) values were found from the φBo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σ s, RP was modified and then φ¯B0 and A∗ values were found as 1.128 eV and 108.88 Acm-2K-2, respectively, and this value of A∗ very close to its theoretical value (=112 Acm-2K-2). The surface state density (Nss) were also obtained from the forward bias IV data for three-temperatures.