Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures

TATAROĞLU A., Yuecedag I., Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.7, ss.1518-1523, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 7
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2008.02.005
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1518-1523
  • Anahtar Kelimeler: MIS type Schottky diode, dielectric properties, ac electrical conductivity, electric modulus, INTERFACE STATES, THIN-FILMS, VOLTAGE CHARACTERISTICS, METAL-SEMICONDUCTOR, FREQUENCY, BARRIER, INSULATOR, OXIDE, CONSTANT
  • Gazi Üniversitesi Adresli: Evet

Özet

Dielectric properties and ac electrical conductivity of the Al/SiO2/p-Si (MIS) Schottky diodes were studied in the frequency and temperature range of 10 kHz-1 MHz and 300-400 K, respectively. Experimental results show that the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac electrical conductivity (sigma(ac)) and the electric modulus were found a strong function of frequency and temperature. The values of the epsilon', epsilon '' and tan delta decrease with increasing frequencies due to the interface states capacitance and a decrease in conductance with increasing frequency. Also, these values increase with increasing temperature. The sigma(ac) is found to increase with increasing frequency and increasing temperature. The variation of conductivity as a function of temperature and frequency reveals non-adiabatic hopping of charge carriers between impurities localized states. In addition, the experimental dielectric data have been analyzed by considering electric modulus formalism. (C) 2008 Elsevier B.V. All rights reserved.