FREQUENCY DEPENDENT DIELECTRIC CHARACTERISTICS AND ELECTRICAL CONDUCTIVITY BEHAVIOR OF AL/C24 H12/P-SI STRUCTURE

Bilge Ocak S., Orhan E.

6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS , İstanbul, Türkiye, 25 - 27 Haziran 2018, ss.31-35

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.31-35
  • Gazi Üniversitesi Adresli: Evet

Özet

We report on the fabrication and the dielectric characteristics and electrical conductivity of C24H12 based metal polymer semiconductor (MPS) type structure. To remove all foreign matter from the surface of the silicon wafer (dirt, scum, silicon dust, etc.), RCA cleaning procedure was used by us. After application of chemical cleaning procedure, Al/C24 H12/p-Si MPS structure were prepared on p-Si (100) substrate by evaporation technique to get the high-performance structure. Dielectric constant (ε′), dielectric loss (ε″), tangent loss (tanδ), electrical modulus (M′ and M″), and ac electrical conductivity (σAC) properties of the Al /C24H12 /p-Si MPS structure dependent on the frequency and voltage have been investigated in the various frequencies at the room temperature. It can be concluded that the interfacial polarization can more easily occur at low frequencies and the majority of interface states at metal-semiconductor interface, contributes to the deviation of dielectric properties of the Al /C24H12 /p-Si MPS structures