Akademik Veri Yönetim Sistemi
ACS Omega, cilt.11, sa.6, ss.10344-10354, 2026 (SCI-Expanded, Scopus)
In this current article, Au/n-Si (metal/semiconductor) MS devices with high-purity poly(vinyl alcohol) (PVA) (99+% hydrolyzed) (MPS1) and Au/(CdTe:PVA)/n-Si (metal/polymer/semiconductor) (MPS2) are grown on the same n-type Si wafer by using the spin-coating technique and determine their effects on light sensitivity and basic electronic parameters like saturation current (I0), which is derived from the straight-line intercept of ln(I) at V = 0, zero-bias barrier height (ϕb0) at V = 0, ideality/quality factor (n), and both the shunt/series resistances (Rs, Rsh). For this purpose, the current–voltage (I–V) measurement is carried out over a wide voltage range (±4.5 V), both in the dark and under 100 mW/cm2 conditions. Experimental results showed that the calculated electrical parameters were highly dependent on light, the organic interlayere, and voltage. The profile of interface states (Nss) dependent on energy and voltage-dependent resistance (Ri), which significantly limit the performance of the photodiode, wwas obtained from the Card-Rhoderick model and Ohm’s law for both before and after illumination, respectively. In addition, voltage-dependent curves of the photosensitivity, photoresponsivity (R), and specific detectivity (D*) were obtained for the 100 mW·cm–2 intensity. When the results obtained for MPS1 and MPS2 photodiodes were compared with each other and with the existing literature, it was observed that the MPS2 exhibited significantly better performance. Therefore, it was shown that MPS2 with the (CdTe:PVA) interlayer could be a good candidate for electrical, optical, and energy conversion applications.