Atıf İçin Kopyala
Hunter D., Gunasekar N., Edwards P. R., Massabuau F., Hatipoğlu İ., Mukhopadhyay P., ...Daha Fazla
Oxide-based Materials and Devices XIV, California, Amerika Birleşik Devletleri, 28 Ocak - 03 Şubat 2023, ss.1
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Yayın Türü:
Bildiri / Tam Metin Bildiri
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Doi Numarası:
10.1117/12.2655959
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Basıldığı Şehir:
California
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Basıldığı Ülke:
Amerika Birleşik Devletleri
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Sayfa Sayıları:
ss.1
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Gazi Üniversitesi Adresli:
Evet
Özet
Tin-gallium oxide (TGO) epilayers have been characterized through the electron microscopy techniques of wavelength-dispersive X-ray spectroscopy (WDX) and cathodoluminescence. Tin incorporation was found to be highly dependent on growth conditions with (0001)-sapphire and (010)-Ga2O3 substrates enhancing tin incorporation. Cathodoluminescence measurements show that TGO luminescence consists of an enhanced blue emission and quenched UV when compared to Ga2O3.and the onset of new green emission originating from the TGO, further correlated through cross-sectional WDX and cathodoluminescence mapping. As well as luminescence intensity changes TGO films display redshifted luminescence bands associated with a bandgap reduction due to the alloying, confirmed through optical transmission measurements. |