An ionization type semiconductor photographic system based on high-resistivity semiconductor film

Salamov B.

IMAGING SCIENCE JOURNAL, vol.45, no.2, pp.69-71, 1997 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 2
  • Publication Date: 1997
  • Doi Number: 10.1080/13682199.1997.11736377
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.69-71
  • Gazi University Affiliated: No


This paper describes for the first time an application Of an ionization type semiconductor photographic system using a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film as a target for rapid visualization of image formation. Semiconductor CuInSe2 films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) in a planar gas discharge cell, have been studied. A measurement is realized by recording the spatial distribution of the gas discharge glow intensity between two parallel electrodes. A gas discharge gap has been formed by a dielectric separator with thickness ranging from 40 to 60 mu m. A discharge has been realized in air at pressures from 60-760 Torr. The assessment of the image formation is then based on analysis of the discharge radiation, visualized by a photograph taken through the SnO2 films. Means of increasing the sensitivity and improving the working characteristics are proposed.