An ionization type semiconductor photographic system based on high-resistivity semiconductor film

Salamov B.

IMAGING SCIENCE JOURNAL, cilt.45, sa.2, ss.69-71, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 45 Konu: 2
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1080/13682199.1997.11736377
  • Sayfa Sayıları: ss.69-71


This paper describes for the first time an application Of an ionization type semiconductor photographic system using a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film as a target for rapid visualization of image formation. Semiconductor CuInSe2 films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) in a planar gas discharge cell, have been studied. A measurement is realized by recording the spatial distribution of the gas discharge glow intensity between two parallel electrodes. A gas discharge gap has been formed by a dielectric separator with thickness ranging from 40 to 60 mu m. A discharge has been realized in air at pressures from 60-760 Torr. The assessment of the image formation is then based on analysis of the discharge radiation, visualized by a photograph taken through the SnO2 films. Means of increasing the sensitivity and improving the working characteristics are proposed.