Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse bias region, photocurrent (I-ph) increases with increasing illumination intensity (P) due to the formation of electron-hole pairs. The double-logarithmic I-ph-P plot has a good relation with 1.27 slope and such high value of slope indicates a lower density of the unoccupied trap level. This indicates that the diode exhibits a good photoconductive and photovoltaic behavior. The photo-to-dark current ratio confirms the photosensitivity of the diode. Thermionic emission (TE) theory was used to determine the diode electronic parameters such as saturation current (I-0), ideality factor (n) and barrier height (phi(B0)) and their values were calculated from the measured I-V data. Moreover, the phi(B0) and series resistance (R-s) were extracted from an alternative method suggested by Norde. All these parameters (phi(B0), n, R-s, and I-0) decrease with increasing illumination intensity and there is a good linear correlation between phi(B0) and n as phi(B0) (n) = 4.72 x 10(-2)n + 0.5464 eV. As a result, the fabricated MPS diode due to the excellent photoresponse can be used for photovoltaic applications.