The letter reports that frequency response of heterojunction structure based on a spin-coated graphenePVP thin film on silicon with gold Schottky contacts and the electronic properties obtained by using capacitance (C) and conductance (G/omega) versus voltage characteristics in the frequency range from 5 to 5 MHz. Furthermore, the electronic magnitudeswere calculated. The accumulation capacitance observed at 3 V changes from 920 to 1094 pF. Here, empirically, the C and G/omega values increased with a decreasing frequency, while increasing in depletion and accumulation regions with increasing voltages. However, particularly, the R-s-V-f curves have peaks in low frequency values in the accumulationand depletion regions, these peaks decreased at high frequencies. Besides, an interface trap state density of 5.6-6.58x10(12) cm(-2).eV(-1) with a relaxation time constant of 157-31.5 mu s was deduced. Additionally, the frequencyand dc bias voltage-dependent dielectric characteristics show a huge dispersion, at room temperature. Experimentally, the high dielectric constant (epsilon(max)') is 111 which is very higher than themaximum value of the conventionalmaterials (SiO2 (3.8), SnO2 (7.5), and so on) and appropriatedopedmaterials to PVP. The results indicate that the graphene-PVP thin film with the high epsilon(max)' max value has a potential in metalorganic-semiconductors device technologies instead of a conventional device.