Temperature dependence of Schottky diode characteristics prepared with photolithography technique

Korucu D., TÜRÜT A.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.101, no.11, pp.1595-1606, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 101 Issue: 11
  • Publication Date: 2014
  • Doi Number: 10.1080/00207217.2014.888774
  • Journal Name: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1595-1606
  • Keywords: GaAs semiconductors, barrier inhomogeneity, barrier height, Schottky barrier diodes, metal-semiconductor contacts, I-V CHARACTERISTICS, BARRIER HEIGHT INHOMOGENEITIES, CURRENT-VOLTAGE, ELECTRICAL CHARACTERIZATION, ELECTRONIC-PROPERTIES, CAPACITANCE-VOLTAGE, CONTACTS, TRANSPORT, FABRICATION, PARAMETERS
  • Gazi University Affiliated: Yes

Abstract

A Richardson constant (RC) of 8.92 Acm(-2)K(-2) from the conventional Richardson plot has been obtained because the current-voltage data of the device quite well obey the thermionic emission (TE) model in 190-320 K range. The experimental nT versus T plot of the device has given a value of T-0 = 7.40 K in temperature range of 160-320 K. The deviations from the TE current mechanism at temperatures below 190 K have been ascribed to the patches introduced by lateral inhomogeneity of the barrier heights. Therefore, an experimental RC value of 7.49 A(cmK)(-2) has been obtained by considering Tung's patch model in the temperature range of 80-190 K. This value is in very close agreement with the known value of 8.16 Acm(-2)K(-2) for n-type GaAs.