Temperature-dependent barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes


Tugluoglu N., Karadeniz S., ACAR S. , Kasap M.

CHINESE PHYSICS LETTERS, vol.21, no.9, pp.1795-1798, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 21 Issue: 9
  • Publication Date: 2004
  • Doi Number: 10.1088/0256-307x/21/9/033
  • Title of Journal : CHINESE PHYSICS LETTERS
  • Page Numbers: pp.1795-1798

Abstract

The current-voltage (I-V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluation of the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 eV and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617 eV and 20.71 A K-2 cm(-2), respectively, by means of the modifled Richardson plot, ln(I-0/T-2) - (q(2)sigma(s0)(2)/2k(2)T(2)) versus 1000/T.