Akademik Veri Yönetim Sistemi
CHINESE PHYSICS LETTERS, cilt.21, sa.9, ss.1795-1798, 2004 (SCI-Expanded)
The current-voltage (I-V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluation of the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 eV and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617 eV and 20.71 A K-2 cm(-2), respectively, by means of the modifled Richardson plot, ln(I-0/T-2) - (q(2)sigma(s0)(2)/2k(2)T(2)) versus 1000/T.