Akademik Veri Yönetim Sistemi
3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.95
Advances in complementary metal oxide semiconductor (CMOS) and flash memory
technologies have greatly impacted the world over the past few decades. Parameters
such as reducing material sizes, developing devices that can operate with lower
energy, increasing data transfer speed, reaching smaller volumes in data storage and
reaching larger capacities can be counted as the driving force of these revolutionary
changes in electronic technology. In this context, in this study, studies have been
carried out to develop data storage and synaptic imitation amounts and memristor
devices that have come to the fore in recent years. The metal oxide material we have
chosen to prepare the samples whose memristive properties will be examined is WO3.
The samples were produced by RF magnetron sputtering technique at room
temperature and then annealed in a CTA furnace between 300 and 700 oC. Then,
structural and optical analyzes of the samples were carried out. From the results
obtained, the memristive properties and upper contacts of the samples to be examined
were taken and I-V measurements were made.