Investigation of the effect of annealing on the structural and optical properties of RF sputtered WO3 nanostructure for memristor applications

Efkere H. İ., Gümrükçü A. E., Özen Y., Kınacı B., Aydın S. Ş., Ateş H., ...More

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Turkey, 25 - 27 May 2022, pp.95

  • Publication Type: Conference Paper / Summary Text
  • City: Ankara
  • Country: Turkey
  • Page Numbers: pp.95
  • Gazi University Affiliated: Yes


Advances in complementary metal oxide semiconductor (CMOS) and flash memory technologies have greatly impacted the world over the past few decades. Parameters such as reducing material sizes, developing devices that can operate with lower energy, increasing data transfer speed, reaching smaller volumes in data storage and reaching larger capacities can be counted as the driving force of these revolutionary changes in electronic technology. In this context, in this study, studies have been carried out to develop data storage and synaptic imitation amounts and memristor devices that have come to the fore in recent years. The metal oxide material we have chosen to prepare the samples whose memristive properties will be examined is WO3. The samples were produced by RF magnetron sputtering technique at room temperature and then annealed in a CTA furnace between 300 and 700 oC. Then, structural and optical analyzes of the samples were carried out. From the results obtained, the memristive properties and upper contacts of the samples to be examined were taken and I-V measurements were made.