Electrical behavior of ultrathin Al<sub>2</sub>O<sub>3</sub>interfacial layers in Al/Al<sub>2</sub>O<sub>3</sub>/p-Si MIS structures prepared by RF magnetron sputtering
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.37, sa.26, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 37 Sayı: 26
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10854-026-18439-7
- Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Gazi Üniversitesi Adresli: Evet
Özet
In this work, an Al/Al2O3/p-Si device incorporating an ultrathin Al(2)O(3)interfacial layer (similar to 10 nm) was fabricated via radio-frequency magnetron sputtering. The fabricated structure exhibited typical metal-insulator-semiconductor characteristics. The structural, optical, and electrical properties of the deposited Al(2)O(3)films and the fabricated MIS device were investigated using X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and current-voltage (I-V) measurements, all performed under dark conditions over the voltage range from - 3 to + 3 V. XPS analysis confirmed the formation of Al(2)O(3)with a slight deviation from the ideal stoichiometric O/Al ratio (approximate to 1.45). Optical characterization of a reference Al(2)O(3)film (similar to 100 nm thick) deposited under identical sputtering conditions revealed high transparency in the visible region and an optical band gap (E-g) of approximately 5.62 eV. Thermionic emission analysis yielded an ideality factor of 3.63, an effective barrier height of approximately 0.65 eV, and a rectification ratio of 3.13 & times; 10(2), indicating non-ideal diode behavior. The observed electrical characteristics are likely associated with the combined influence of interface states, barrier-height inhomogeneities, series resistance, and other non-ideal transport mechanisms. Overall, the results suggest that interface-related effects play an important role in determining the electrical behavior of ultrathin Al2O3-based MIS structures fabricated by RF magnetron sputtering.